For nearly five decades, silicon has remained as the industry workhorse for solid-state electrical power switching. In the past two decades, there has been a concerted effort to develop Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductor switching devices because of their superior electrical and thermal performances compared to silicon power switching devices. This talk will discuss the current status and future trends in Wide Band Gap (WBG) power devices for increased energy efficiency and improved power system reliability.